ABSTRACT The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400℃. The optical properties concerning the absorp-tion, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-Ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm3/Gwatt2, which is about five times higher than the bulk value. The fully computerized z-scan system was used to measure the nonlinear coefficients from the Gaussian fit of the transmitted laser incident.
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