JMMCE  Vol.5 No.2 , October 2006
Structural and microstructural characteristics of B-doped PbTe semiconductor
ABSTRACT
The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.

Cite this paper
J. Stojanovic, "Structural and microstructural characteristics of B-doped PbTe semiconductor," Journal of Minerals and Materials Characterization and Engineering, Vol. 5 No. 2, 2006, pp. 143-153. doi: 10.4236/jmmce.2006.52010.
References
[1]   BALZAR, D., LEDBETTER, H., 1997, “Software for comparative analysis of diffraction – line boadening.” Advances in X – ray analysis, vol. 39, edited by V. Gilfrich et al., Plenum Press, New York, pp. 457 – 464.

[2]   RODRIGUEZ – CARVAJAL, J., 1995, “User’s guide to program FULLPROF.” 2004-LLBJRC (Laboratorie León Brillouin, CEA-CNRS, Centre d’Etudes de Saclay, Gif sur Yvette, France).

[3]   YASUTOSHI, N., SHIGERU, O., SHOISHI, S. & YOSHIHIKO, S., 1983, “Charge distribution and atomic thermal vibrations in lead chalcogenide crystals.” Acta Cryst., B39, pp. 312 – 317.

[4]   YASUTOSHI, N., KATASHI, M., SHOISHI, S., YOSHIHIKO, S., KOSHIRO, T & IWAO, I. 1987, “Temperature dependence of atomic thermal parameters of lead chalcogenides, PbS, PbSe, PbTe.” Acta Cryst., C43, pp. 1443 – 1445.

 
 
Top