ABSTRACT The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural
measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.
Cite this paper
J. Stojanovic, "Structural and microstructural characteristics of B-doped PbTe semiconductor," Journal of Minerals and Materials Characterization and Engineering, Vol. 5 No. 2, 2006, pp. 143-153. doi: 10.4236/jmmce.2006.52010.
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