Improved Evaluation Method for the SRAM Cell Write Margin by Word Line Voltage Acceleration

Hiroshi Makino^{*},
Naoya Okada,
Tetsuya Matsumura,
Koji Nii,
Tsutomu Yoshimura,
Shuhei Iwade,
Yoshio Matsuda

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References

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[11] Visit, “45 nm PTM HP Model: V2.1.”
http://www.eas.asu.edu/~ptm/