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 EPE  Vol.2 No.2 , May 2010
Dopant Implantation into the Silicon Substrate with Non-Planar Surface
Abstract: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.
Cite this paper: nullG. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface," Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi: 10.4236/epe.2010.22011.
References

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