EPE  Vol.2 No.2 , May 2010
Dopant Implantation into the Silicon Substrate with Non-Planar Surface
Abstract: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.
Cite this paper: nullG. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface," Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi: 10.4236/epe.2010.22011.

[1]   G. A. Tarnavsky and V. S. Anishchik, “Solvers of a Processor System of Program Complex NanoMod,” Nano- and Microsystem Technology, in Russian, No. 4, 2009, pp. 6-13.

[2]   G. A. Tarnavsky and V. S. Anishchik, “Toolbox NanoMod for Computer Support of the Design of Nano- Structured Semiconductor Materials,” Computational Methods and Programming, in Russian, Vol. 10, Section 2, 2009, p. 3450.

[3]   H. Runge, “Distribution of Implanted Ions under Arbitrarily Shaped Mask,” Physical Status Solidi, Vol. 39(a), 1977, pp. 595-607.

[4]   S. Furikawa, H. Matsumura and H. Ishiwara, “Theoretical Consideration on Lateral Spread of Implanted Ions,” Japanese Journal of Applied Physics, Vol. 11, No. 2, 1972, pp. 134-142.

[5]   S. Monfray, T. Skotnicki, B. Tavel, et al., “Highly-Performant 38 nm SON (Silicon-On-Nothing) P-MOSFETs with 9 nm-Thick Channels,” IEEE Silicon-on-Insulator Conference Proceedings, 2002, pp. 22-25.

[6]   D. Yu. Adamov and O. S. Matveenko, “Improvement of Structures of MOP Transistors in Nanometer Technologies,” Nano- and Micro-system Technology, in Russian, No. 2, 2008, pp. 53-63.

[7]   Ar. G. Mustafaev and Ab. G. Mustafaev, “Problems of Scaling the Gate Dielectric for MOS Technologies,” Nano- and Micro-System Technology, in Russian, No. 4, 2008, pp. 7-22.