WJCMP  Vol.2 No.1 , February 2012
Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor
Abstract: We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.
Cite this paper: P. Tripathi, S. Ashraf, S. Hasan and A. Sharma, "Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor," World Journal of Condensed Matter Physics, Vol. 2 No. 1, 2012, pp. 42-46. doi: 10.4236/wjcmp.2012.21007.

[1]   A. Sergeev and V. Mitin, “Effect of Electronic Disorder on Phonon-Drag Thermopower” Physical Review B, Vol. 61, No. 9, 2000, pp. 6041-6047. doi:10.1103/PhysRevB.61.6041

[2]   S. Agan, O. A. Mironov, E. H. C. Parker, T. E. Whall, C. P. Parry, V. Y. Kashirin, Y. F. Komnik, V. B. Krasovitsky, B. Verkin and C. J. Emeleus, “Low-Temperature Electron Transport in Si with an MBE-Grown Sb δ Layer”, Physical Review B, Vol. 63, 2001, pp. 5402-5472. doi:10.1103/PhysRevB.63.075402

[3]   M. E. Gershenson, D. Gong, T. Sato, B. S. Karasik and A. V. Sergeev, “Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures,” Applied Physics Letters, Vol. 79, No. 13, 2001, pp. 2049-2051. doi:10.1063/1.1407302

[4]   O. Prus, M. Reznikov, U. Sivan and V. Pudalov, “Cooling of Electrons in a Silicon Inversion Layer,” Physical Review Letters, Vol. 88, No. 1, 2002, pp. 6801-6804. doi:10.1103/PhysRevLett.88.016801

[5]   P. Kivinen, A. Savin, M. Zgirski, P. Torma, J. Pekola, M. Prunnila and J. Ahopelto, “Electron-Phonon Heat Transport and Electronic Thermal Conductivity in Heavily Doped Silicon-On-Insulator Film,” Journal of Applied Physics, Vol. 94, No. 5, 2003, pp. 3201-3025. doi:10.1063/1.1592627

[6]   A. K. Meikap, Y. Y. Chen and J. J. Lin, “Anomalous Temperature and Disorder Dependences of Electron- Phonon Scattering Rate in Impure V1?xAlx Alloys,” Phy- sical Review B, Vol. 69, No. 21, 2004, pp. 2202-2205. doi:10.1103/PhysRevB.69.212202

[7]   A. Sergeev, M. Y. Reizer and V. Mitin, “Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures,” Physical Review Letters, Vol. 94, No. 13, 2005 pp. 6602-6605. doi:10.1103/PhysRevLett.94.136602

[8]   C. Y. Wu, W. B. Jian and J. J. Lin, “Electron-Phonon Scattering Times in Crys-talline Disordered Titanium Alloys between 3 and 15 K,” Physical Review B, Vol. 57, No. 18, 1998, pp. 11232-11241. doi:10.1103/PhysRevB.57.11232

[9]   N. G. Ptitsina, G. M. Chulkova, K. S. Il’in, A. V. Sergeev, F. S. Pochinkov and E. M. Gershenzon, “Electron-Pho- non Interaction in Disordered Metal Films: The Resistivity and Electron Dephasing Rate,” Physical Review B, Vol. 56, No. 16, 1997, pp. 10089-10096.

[10]   J. J. Lin and J. P. Bird, “Recent Experi-mental Studies of Electron Dephasing in Metal and Semicon-ductor Meso- scopic Structures,” Journal of Physics: Con-densed Matter, Vol. 14, No. 18, 2002, pp. R501-R596. doi:10.1088/0953-8984/14/18/201

[11]   A. B. Pippard, “Ultra-sonic Attenuation in Metals,” Philosophical Magazine, Vol. 46, 1955, pp. 1104-1114.

[12]   M. Prunnila, P. Kivinen, A. Savin, P. Torma and J. Ahopelto, “Intervalley Scattering-Induced Electron-Pho- non Energy Relaxation in Many-Valley Semi-conductors at Low Temperatures”, Physical Review Letters, Vol. 95, No. 20, 2005, pp. 206602-206605. doi:10.1103/PhysRevLett.95.206602

[13]   E. Chow, H. P. Wei, S. M. Grivin, W. Jan and J. E. Cunningham, “Effect of Disor-der on Phonon Emissions from a Two-Dimensional Electron Gas in GaAs/AlxGa1-xAs Heterostructures,” Physical Review B, Vol. 56, No. 4, 1997, pp. R1676-R1679. doi:10.1103/PhysRevB.56.R1676

[14]   P. Tripathi and B. K. Ridley, “Dynamics of Hot-Electron Scattering in GaN Het-erostructures,” Physical Review B, Vol. 66, No. 19, 2002, pp. 195301-195310. doi:10.1103/PhysRevB.66.195301

[15]   S. C. Lee and I. Galbraith, “Intersubband and Intrasubband Electronic Scatter-ing Rates in Semiconductor Quantum Wells,” Physical Review B, Vol. 59, No. 24, 1999, pp. 15796-15805. doi:10.1103/PhysRevB.59.15796

[16]   E. Chow, H. P. Wei, S. M. Grivin and M. Shayegan, “Phonon Emission from a 2D Electron Gas: Evidence of Transition to the Hydrodynamic Regime,” Physical Review Letters, Vol. 77, No. 6, 1996, pp. 1143-1146. doi:10.1103/PhysRevLett.77.1143

[17]   S. S. Z. Ashraf, P. Tripathi, A. C. Sharma and S. T. Hasan, “Electron-Phonon Relaxation in Disordered Two-Dimen- sional Electron Gas with Dynamically Screened Deformation Potential,” Journal of Physics: Condensed Matter, Vol. 21, No. 2, 2009, p. 025504. doi:10.1088/0953-8984/21/2/025504

[18]   X. Z. Yu, Y. Yang and W. Pan, “Electron-Phonon Interaction in Disordered Semiconductors,” Applied Physics Letters, Vol. 92, No. 9, 2008, pp. 092106-092108.

[19]   J. T. Muhonen, et al. “Strain De-pendence of Electron- Phonon Energy Loss Rate in Many-Valley Semiconductors,” Applied Physics Letters, Vol. 98, No. 18, 2011, pp. 182103-182105. doi:10.1063/1.3579524

[20]   G. D. Mahan, “Many Particle Physics,” 2nd Edition, Plenum, New York, 1990. doi:10.1007/978-1-4613-1469-1