JMP  Vol.3 No.1 , January 2012
Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)
The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.

Cite this paper
V. Chinchamalatpure, S. Chore, S. Patil and G. Chaudhari, "Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)," Journal of Modern Physics, Vol. 3 No. 1, 2012, pp. 69-73. doi: 10.4236/jmp.2012.31010.
[1]   K. J. Hubbard and D. G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Material Research, Vol. 11, No. 11, 1996, pp. 2757- 2776. doi:10.1557/JMR.1996.0350

[2]   R. Puthenkovilakam and J. P. Chang, “Valence Band Structure and Band Alignment at the ZrO2/Si Interface,” Applied Physics Letters, Vol. 84, No. 8, 2004, pp. 1353- 1355. doi:10.1063/1.1650547

[3]   J. Robertson, “Band Offsets of Wide-Band-Gap Oxides and Implications for Future Electronic Devices,” Journal of Vacuum Science Technology, Vol. B 18, 2000, p. 1785.

[4]   K. S. Krisch, J. D. Bude and L. Manchanda, “Gate Capacitance Attenuation in MOS Devices with Thin Gate Dielectrics,” IEEE Electron Device Letter, Vol. 17, No. 11, 1996, pp. 521-524. doi:10.1109/55.541768

[5]   S. Chatterjeea, S. K. Samantaa, H. D. Banerjeeb and C. K. Maiti, “Electrical Properties of Stacked Gate Dielectric (SiO2/ZrO2) Deposited on Strained SiGe Layers,” Thin Solid Films, Vol. 422, No. 1-2, 2002, pp. 33-38. doi:10.1016/S0040-6090(02)00995-1

[6]   Y. S. Lin, R. Puthenkovilakam, J. P. Chang, C. Bouldin, I. Levin, N. V. Nguyen, J. Ehrstein, Y. Sun, P. Pianetta, T. Conard, W. Vandervorst, V. Venturo and S. Selbrede, “Interfacial Properties of ZrO2 on Silicon,” Journal of Applied Physics, Vol. 93, No. 10, 2003, pp. 5945-5952.

[7]   R. Mahapatra, J. H. Lee, S. Maikap, G. S. Kar, A. Dhar, N.-M. H. Wang, D. Y. Kim, B. K. Mathur and S. K. Rayc, “Electrical and Interfacial Characteristics of Ultra-Thin ZrO2 Gate Dielectrics on Strain Compensated SiGeC/Si Heterostructure,” Applied Physics Letters, Vol. 82, No. 14, 2003, pp. 2320-2327. doi:10.1063/1.1566480

[8]   S. Harasek, A. Lugstein, H. D. Wanzenboeck and E. Bertagnolli, “Slow Trap Response of Zirconium Dioxide Thin Films on Silicon,” Applied Physics Letters, Vol. 83, No. 7, 2003, p. 1400. doi:10.1063/1.1602577

[9]   A. Stesmans and V. V. Afanas’ev, “Si Dangling- Bond-Type Defects at the Interface of Si(100) with Ultrathin Layers of SiOx, Al2O3, and ZrO2,” Applied Physics Letters, Vol. 80, No. 11, 2002, pp. 1957-1959. doi:10.1063/1.1448169

[10]   J. M. Howard, V. Craciun, C. Essary and R. K. Singh, “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si,” Applied Physics Letters, Vol. 81, No. 18, 2002, pp. 3431-3433. doi:10.1063/1.1517407

[11]   N. Sriprang, D. Kaewchina and J. D. Kennedy, “Processing and Sol Chemistry of a Triol-Based Sol-Gel Route for Preparing Lead Zirconate Titanate Thin Films,” Journal of American Ceramic Society, Vol. 83, No. 8, 2000, pp. 1914-1920.

[12]   X. R. Huang and Z. T. Huang, “Preparation of Asymmetric Alumina Membrane by Sol-Gel Techniques,” Journal of Inorganic Material, Vol. 13, No. 4, 1998, p. 534.

[13]   L. Q. Zhu, Q. Fang, G. He and M. Liu, “Interfacial and Optical Properties of ZrO2/Si by Reactive Magnetron Sputtering,” Material Letter, Vol. 60, No. 7, 2006, pp. 888-891. doi:10.1016/j.matlet.2005.10.039

[14]   S. Dhar and M. S. Dharmaprakash, “MOCVD of ZrO2 Films from Bis(t-Butyl-3-oxo-butanoato) Zirconium (IV): Some Therotical (Thermodynamics) and Experimental Aspects,” Material Science, Vol. 31, 2008, pp. 67-72.

[15]   J. Zhu and Z. G. Liu, “Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High-k gate Dielectric Application Prepared by Pulsed Laser Deposition,” Applied Physics, Vol. 78, No. 5, 2004, pp. 741-744. doi:10.1007/s00339-002-2025-0

[16]   S. J. Wang and C. K. Ong, “Rapid Thermal Annealing Effect on Crystalline Yttria-Stabilized Zirconia Gate Dielectrics,” Semiconductor Science and Technology, Vol. 18, No. 2, 2003, pp. 154-157. doi:10.1088/0268-1242/18/2/316

[17]   T. S. Jeeon, J. M. White and D. I. Kwong, “Thermal Stability of Ultrathin ZrO2 Film on Si(100),” Applied Physics Letter, Vol. 78, No. 3, 2001, p. 368. doi:10.1063/1.1339994