JMP  Vol.3 No.1 , January 2012
Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)
ABSTRACT
The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.

Cite this paper
V. Chinchamalatpure, S. Chore, S. Patil and G. Chaudhari, "Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)," Journal of Modern Physics, Vol. 3 No. 1, 2012, pp. 69-73. doi: 10.4236/jmp.2012.31010.
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