ABSTRACT This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.
Cite this paper
nullO. Zeynali, D. Masti, M. Nezafat and A. Mallahzadeh, "Study of “Radiation Effects of Nuclear High Energy Particles” on Electronic Circuits and Methods to Reduce Its Destructive Effects," Journal of Modern Physics, Vol. 2 No. 12, 2011, pp. 1567-1573. doi: 10.4236/jmp.2011.212191.
 L. W. Townsend, J. L. Shinn and J. W. Wilson, “Interplanetary Crew Exposure Estimates for the August 1972 and October 1989 Solar Particle Events,” Radiation Re- search, Vol. 126, No. 1, 1991, pp. 108-110.
 F. A. Cucinotta, W. Schimmerling, J. W. Wilson, L. E. Petersen, G. D. Badhwar, P. B. Saganti and J. F. Dicello, “Space Radiation Cancer Risk Projections for Exploration Missions: Uncertainty Reduction and Mitigation,” DIANE Publishing, Darby, 2001.
 T. Liu, “Total Ionization Dose Effects and Single-Event Effects Studies of a 0.25 μm Silicon-On-Sapphire CMOS Technology,” 9th European Conference on Radiation and Its Effects on Components and Systems, Deauville, 10-14 September 2007, pp. 1-5.
 E. N. Parker, “Shielding Astronauts from Cosmic Rays,” Space Weather, Vol. 3, 2005, p. S08004.
 A. H. Johnston, “Radiation Damage of Electronic and Optoelectronic Devices in Space,” 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, Tsukuba, 11-13 October 2000.
 G. C. Messenger and M. S. Ash, “The Effects of Radiation on Electronic Systems,” Van Nostrand Reinhold, New York, 1992.
 A. Ferrari, et al., “Fluka: A Multi-Particle Transport Code,” CERN, Geneva, 2005.
 X-5 Monte Carlo Team, “MCNP-A General Monte Carlo N-Particle Transport Code,” Los Alamos National Laboratory, Los Alamos, 2003.
 T. P. Ma and P. V. Dressendorfer, “Ionizing Radiation Effects in MOS Devices and Circuits,” John Wiley and Sons, New York, 1989.
 S. Duzellier, “Radiation Effects on Electronic Devices in Space,” Aerospace Science and Technology, Vol. 9, No. 1, 2005, pp. 93-99. doi;10.1016/j.ast.2004.08.006
 G. C. Messenger and M. S. Ash, “Single Event Phenomena,” Kluwer Academic Publishers, New York, 1997.
 G. Barbottin and A. Vapaille, “Instabilities in Silicon Devices,” Elsevier, Berlin, 1999.
 H. J. Barnaby, M. Mclain and I. S. Esqueda, “Total-Ion- Izing-Dose Effects on Isolation Oxides in Modern CMOS Technologies,” Nuclear Instruments and Methods in Physics Research B, Vol. 261, No. 1-2, 2007, pp 1142- 1145. doi;10.1016/j.nimb.2007.03.109
 H. J. Barnaby, “Total-Ionizing-Dose Effects in Modern CMOS Technologies,” IEEE Transactions on Nuclear Science, Vol. 53, No. 6, 2006, pp. 3103-3121.