EPE  Vol.13 No.1 , January 2021
Silicon Solar Cell Space Charge Region and Capacitance Behavior under Electric Field
Abstract: This paper investigates theoretically the behavior of the space charge region of a silicon solar cell and its associated capacitance under the effect of an external electric field. The purpose of this work is to show that under illumination the solar cell’s space charge region width varies with both operating point and the external induced electric field and how the solar cell capacitance varies with the space charge region width. Based on a 1D modelling of the quasi-neutral p-base, the space charge region width is determined and the associated capacitance is calculated taking into account the external electric field and the junction dynamic velocity. Based on the above calculations and simulations conducted with Mathcad, we confirmed the linear dependence of the inverse capacitance with space charge region width for thin space charge region and we exhibit an exponential dependence for large space charge region.
Cite this paper: Zouma, B. , Barro, F. and Aziz Honadia, P. (2021) Silicon Solar Cell Space Charge Region and Capacitance Behavior under Electric Field. Energy and Power Engineering, 13, 41-50. doi: 10.4236/epe.2021.131003.

[1]   Baskys, A., Sapurov, M. and Zubavicius, R. (2013) The New Equations of p-n Junction Carrier Injection Level. Elektronika Ir Elektrotechnika, 19, 45-48.

[2]   Kumar Behura, S., Mahala, P. and Ray, A. (2011) A Model on the Effect of Injection Levels over the Open-Circuit Voltage of Schottky Barrier Solar Cells. Journal of Electron Devices, 10, 471-482.

[3]   Yue, Y., Liou, J.J. and Ortiz-Conde, A. (1995) High-Level Injection in Quasi-Neutral Region of n/p Junction Devices: Numerical Results and Empirical Model. Journal of Applied Physics, 77, 1611-1615.

[4]   Meier, D.L., Hwang, J.-M. and Campbell, R.B. (1988) The Effect of Doping Density and Injection Level on Minority-Carrier Lifetime as Applied to Bifacial Dendritic Web Silicon Solar Cells. IEEE Transactions on Electron Devices, ED-35, 70-79.

[5]   Geerligs, L.J. and Macdonald, D. (2004) Base Doping and Recombination Activity of Impurities in Crystalline Silicon Solar Cells. Progress in Photovoltaics: Research and Applications, 12, 309-316.

[6]   Neamen, D.A. (2003) Semiconductor Physics and Devices: Basic Principles. 3rd Edition, McGraw-Hill, New York.

[7]   Kim, D.-K., Oh, Y.-J., Kim, S.-H., Hong, K.-J., Jung, H.-Y., Kim, H.-J. and Jeon, M.-S. (2013) A Study of the Relationship Analysis of Power Conversion and Changed Capacitance in the Depletion Region of Silicon Solar Cell. Transactions on Electrical and Electronic Materials, 14, 177.

[8]   Anil Kumar, R., Suresh, M.S. and Nagaraju, J. (2006) Effect of Solar Array Capacitance on the Performance of Switching Shunt Voltage Regulato. IEEE Transactions on Power Electronics, 21, 543-548.

[9]   Edler, A., Schlemmer, M., Ranzmeyer, J. and Harney, R. (2012) Understanding and Overcoming the Influence of Capacitance Effects on the Measurement of High Efficiency Silicon Solar Cells. Energy Procedia, 27, 267-272.

[10]   Roth, T., Wichmann, D., Meyer, K. and Orlob, M. (2011) In-Depth Analysis of Transient Errors of Inline IV Measurements. Energy Procedia, 8, 82-87.

[11]   Mbodji, S., Mbow, B., Barro, F.I. and Sissoko, G. (2011) A 3D Model for Thickness and Diffusion Capacitance of Emitter-Base Junction Determination in a Bifacial Polycrystalline Solar Cell under Real Operating Condition. Turkish Journal of Physics, 35, 281-291.

[12]   Sissoko, G., Dieng, B., Correa, A., Adj, M. and Azilinon, D. (1998) Silicon Solar Cell Space Charge Region width Determination by a Study in Modelling. Proceedings of the World Renewable Energy Conference, 1852-1855.

[13]   Zoungrana, M., Zerbo, I., Séré, A., Zouma, B. and Zougmore, F. (2011) 3D Study of Bifacial Silicon Solar Cell under Intense Light Concentration and under External Constant Magnetic Field. Global Journal of Engineering Research, 10, 113-124.

[14]   Zoungrana, M., Dieng, B., Lemrabott, O.H., Toure, F., Ould El Moujtaba, M.A., Sow, M.L. and Sissoko, G. (2012) External Electric Field Influence on Charge Carriers and Electrical Parameters of Polycrystalline Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2967-2972.

[15]   Furlan, J. and Amon, S. (1985) Approximation of the Carrier Generation Rate in Illuminated Silicon. Solid-State Electronics, 28, 1241-1243.

[16]   Mohammad, S.N. (1987) An Alternative Method for the Performance Analysis of Silicon Solar Cells. Journal of Applied Physics, 61, 767-772.

[17]   Rajman, K., Singh, R. and Shewchun, J. (1979) Absorption Coefficient of Silicon for Solar Cell Calculations. Solid-State Electronics, 22, 793-795.

[18]   Diallo, H.L., Maiga, A.S., Wereme, A. and Sissoko, G. (2008) New Approach of Both Junction and Back Surface Recombination Velocity in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. The European Physical Journal Applied Physics, 42, 203-211.

[19]   Böer, K.W. (2010) Introduction to Space Charge Effects in Semiconductors. Springer-Verlag, Berlin.

[20]   Hu, C.C. (2010) Modern Semiconductor Devices for Integrated Circuits. Pearson/ Prentice Hall, Upper Saddle River.

[21]   Barro, F.I., Sane, M. and Zouma, B. (2015) On the Capacitance of Crystalline Silicon Solar Cells in Steady State. Turkish Journal of Physics, 39, 122-127.