EPE  Vol.12 No.10 , October 2020
A.C. Recombination Velocity as Applied to Determine n+/p/p+ Silicon Solar Cell Base Optimum Thickness
Abstract: This work deals with determining the optimum thickness of the base of an n+/p/p+ silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination (λ), with boundary conditions that impose recombination velocities (Sf) and (Sb) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity (Sb). By the graphic technique of comparing the two expressions obtained, depending on the thickness (H) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.
Cite this paper: Ndiaye, A. , Gueye, S. , Sow, O. , Diop, G. , Ba, A. , Ba, M. , Diatta, I. , Habiboullah, L. and Sissoko, G. (2020) A.C. Recombination Velocity as Applied to Determine n+/p/p+ Silicon Solar Cell Base Optimum Thickness. Energy and Power Engineering, 12, 543-554. doi: 10.4236/epe.2020.1210033.

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