Xinglin Zhu¹, Xinyu Zhao¹, Lei Li¹, Yi Peng¹, Wenwang Wei¹, Xuan Zhang¹, Mengwei Su¹, Yukun Wang^1*, Ziqian Chen^1*, Wenhong Sun^1,2*

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¹ Research Center for Optoelectronic Materials and Devices, School of Physical Science Technology, Guangxi University, Nan-ning, China.
² Guangxi Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guangxi University, Nanning, China.
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Abstract: It is well known that [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (J_sc), fill factor (FF), open-circuit voltage (V_oc) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH₃NH₃PbI₃ (MAPbI₃) precursor solution was 1 wt%, the device obtained the smallest V_oc decay (less than 1%) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C₆₀) as electron transport layer (ETL). The PSCs V_oc stability improvement is attributed to enhanced crystallinity of photoactive layer and decreased non-radiative recombination by PCBM doping in the perovskites.

Keywords: Self-Passivation, Small Open-Circuit Voltage Loss, PCBM

Cite this paper: Zhu, X. , Zhao, X. , Li, L. , Peng, Y. , Wei, W. , Zhang, X. , Su, M. , Wang, Y. , Chen, Z. , Sun, W. (2020) Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss. Energy and Power Engineering, 12, 257-272. doi: 10.4236/epe.2020.126016.

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