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Biography
Prof. Hitoshi Habuka

Yokohama National University, Japan

Professor


Email: habuka1@ynu.ac.jp


Qualifications


1996 Ph.D., Engineering, Hiroshima University

1981 M.A., Science, Kyoto University

1979 B.A., Science, Niigata University


Publications (selected)

  1. "Rate Theory of Multicomponent Adsorption of Organic Species on Silicon Wafer Surface", Journal of Electrochemical Society, 2000, 147, 2319-2323 (with Manabu Shimada and Kikuo Okuyama).
  2. "Molecular Interaction Radii and Rate Constants for Clarifying Organic Compound Physisorption on Silicon Surface", Journal of Electrochemical Society, 2010, 157, H1014-H1018 (with Tatsuhito Naito and Norihiro Kawahara).
  3. "Silicon Epitaxial Growth Rate and Transport Phenomena in a Vertical Stacked-Type Multi-Wafer Reactor", Japanese Journal of Applied Physics, 2012, 51, 026701-1-5(with Masaki Tsuji).
  4. "Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas", 2012, 717-720, 379-382 (with Kazuchika Furukawa, Toshimitsu Kanai, and Tomohisa Kato).
  5. "Numerical Evaluation for Single Wafer Wet Etching Rate of Silicon Dioxide Film Using Hydrogen Fluoride Aqueous Solution", Materials Science in Semiconductor Processing, 2012, 15, 543-548 (with Shintaro Ohashi and Tetsuo Kinoshita).
  6. "Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas", Materials Science Forum, 2012, 725, 49-52 (with Kazuchika Furukawa, Toshimitsu Kanai, and Tomohisa Kato).
  7. "Concentration of Three Organic Compounds Influencing Each Other on Silicon Surface", Solid State Phenomena, 2012, 187, 303-306 (with Tatsuhito Naito, a and Norihiro Kawahara) [Impact factor: 0.399 (2012)].
  8. "Langasite Crystal Microbalance Used for In-Situ Monitoring of Amorphous Silicon Carbide Film Deposition", ECS Journal of Solid State Science and Technology, 2012, 1, 62-65, (with Yurie Tanaka).
  9. "Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas", Materials Science Forum, 2013, 740-742, 235-238 (with Masaki Tsuji).
  10. "In-Situ Monitoring of Chemical Vapor Deposition from Trichlorosilane Gas and Monomethylsilane Gas Using Langasite Crystal Microbalance", Journal of Surface Engineered Materials and Advanced Technology, 2013, 3, 61-66 (with Yurie Tanaka).
  11. "Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere", Advanced Materials Research, 2013, 699, 445-449 (with Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, and Yoshikazu Takahashi).
  12. "Amorphous Silicon Carbide Chemical Vapor Deposition on Metal Surface Using Monomethylsilane Gas at Low Temperatures", Surface and Coating Technology, 2013, 217, 88-93 (with Masaki Tsuji).
  13. "Precipitates Caused by Prolonged High-Temperature Annealing in Floating Zone Silicon Wafer Grown from Czochralski Single-Crystal Rod", Materials Science in Semiconductor Processing, 2013, 16, 923–927 (with Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, and Yoshikazu Takahashi).
  14. "Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher", 2013, ECS J. Solid State Science and Technology, 2, 264-267 (with Kosuke Mizuno, Shintaro Ohashi, and Tetsuo Kinoshita).
  15. "Silicon chemical vapor deposition process using a half-inch silicon wafer for Minimal Manufacturing System", Physics Procedia, 2013, 46C, 230-238 (with Ning Li, Shin-ichi Ikeda and Shiro Hara).
  16. "Molecular Adsorption and Desorption Behavior on Silicon Surface in a Complex Ambient Atmosphere Containing Vapors of Diethylphthalate, Acetic Acid and Water", American Journal of Analytical Chemistry, 2013, 4, 80-85 (with Nobutaka Ono, Ayumi Sakurai and Tatsuhito Naito).
  17. "Off-Orientation Influence on C-face (0001) 4H-SiC Surface Morphology Produced by Etching using Chlorine Trifluoride Gas", ECS Journal of Solid State Science and Technology, 2013, 2, N3025-N3027 (with Yusuke Fukumoto and Tomohisa Kato).
  18. "Langasite Crystal Microbalance Frequency Behavior over Wide Gas Phase Conditions for Chemical Vapor Deposition", Surface and Coatings Technology, 2013, 230, 312-315 (with Misako Matsui).
  19. "Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor", ECS Journal of Solid State Science and Technology, 2014, 3, N3006-N3009 (with Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida and Toshiyuki Ohno).

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