Dr. Ze Jia

School of Microelectronics and Solid-State Electronics

University of Electronic Science and Technology of China



2007 Ph.D., Institute of Microelectronics, Tsinghua University, China

2002 B.Sc., Department of Electronic Engineering, Tsinghua University, China

Publications (selected)

  1. Yin C; Jia Z*; Ma WC; et al. Magnetoresistive Behavior and Magnetization Reversal of NiFe/Cu/CoFe/IrMn Spin Valve GMRs in Nanoscale, International Journal of Minerals, Metallurgy and Materials, 2013, in press
  2. Yin C; Jia Z*; Ma WC; et al. Modeling and analysis of nano-sized GMRs based on Co, NiFe and Ni materials, Science China: Information Sciences, 2013, published online. (DOI: 10.1007/s11432-012-4759-4)
  3. Jia Z*; Wang LK; Zhang NW; et al. Effects of anode materials on resistive characteristics of NiO thin films, Applied Physics Letters, 2013, 102: 042901.
  4. Ma WC; Jia Z*; Yin C; et al. Analysis and Optimization of GMR Based Current Sensors with Identical Pinning Orientation, ECS Transactions, 2012(1), 44: 1419.
  5. Xu JL; Jia Z*; Zhang NW; et al. Influence of La and Mn dopants on the current-voltage characteristics of BiFeO3/ZnOheterojunction, Journal of Applied Physics, 2012, 111: 074101.
  6. Yin C; Jia Z*; Ma WC; et al. Simulations of Interaction among GMRs in a Nano-sized Biosensor Array, Tsinghua Science and Technology, 2011(2), 16: 151.
  7. Zhang NW; Jia Z*; Zhang MM; et al. Comparisons and Analyses on Heterostructures Consisting of ZnO and Different Ferroelectric Films, Proceedings of MRS, 2011, 1368. (DOI: 10.1557/opl.2011.1088)
  8. Jia Z*; Zhang MM; Ren TL. Modulation effect of lead zirconatetitanate for zinc oxide channel resistance in ferroelectric field effect transistor, Ferroelectrics, 2011(1), 421: 92.
  9. Zhang MM; Jia Z*; Yin C; et al. Effects of Wet Etching on Properties of Lead Zirconium Titanate in Integration Process, Nanotechnology and Precision Engineering, 2011(4), 9: 357.
  10. Zhang MM; Jia Z*; Wang LK; et al. Study of Iridium Bottom Electrode in Ferroelectric Random Access Memory Application, Ferroelectrics, 2010(1), 406: 97.
  11. Jia Z*; Wang LK; Ren TL. Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes, Chinese Physics Letters, 2010, 27:118503.
  12. Wang LK; Jia Z*;Ren TL. Bipolar Switching Analysis and Negative Resistance Phenomenon in TiOx-based Devices, IEEE EDSSC, Hong Kong, 2010.
  13. Zhang MM; Jia Z*;Ren TL. Effects of electrodes on the properties of sol–gel PZT based capacitors in FeRAM, Solid-State Electronics, 2009, 53: 473.
  14. Jia Z*; Ren TL; Liu TZ; et al. Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM, Materials Science and Engineering B, 2007, 138: 219.
  15. Jia Z*; Ren TL; Zhang ZG; et al. Pt/Pb(Zr,Ti)O3/Pt capacitor with excellent fatigue properties by sol-gel process applied to FeRAM. Journal of Physics D, 2006, 39: 2587.
  16. Jia Z*; Ren TL; Liu TZ; et al. Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors, Chinese Physics Letters, 2006, 23: 1042.
  17. Jia Z*; Ren TL; Zhang ZG; et al. Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM, Chinese Physics Letters, 2006, 23: 1943.

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