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Biography
Dr. Meng Zhang

Philips Lumileds Lighting Company, USA


Email: mezhang@umich.edu


Qualifications


2011 Ph.D., University of Michigan, Applied Physics

2009 MBAEE, University of Michigan

2004 M.S., Purdue University, Physics

2003 B.S., University of Science and Technology of China, Physics


Publications (selected)

  1. InGaN/GaN Self-Organized Quantum Dot Laser Diodes with a Lasing Wavelength of 524 nm, M. Zhang, A. Banerjee, C.-S. Lee, C. S. Lee, J. Hinckley, and P. Bhattacharya, accepted by Appl. Phys. Lett.
  2. Barrier Height of Pt-InxGa1-xN (0x0.5) Nanowire Schottky Diodes, W. Guo, A. Banerjee, M. Zhang, and P. Bhattacharya, Appl. Phys. Lett. 98, 183116, 2011.
  3. Auger Recombination in Defect-Free III-Nitride Nanowires, W. Guo, M. Zhang, P. Bhattacharya, and J. Heo, Nano Lett., 11, 1434, 2011.
  4. Tunnel Injection In0.25Ga0.75N/GaN Quantum Dot Light Emitting Diodes (λ ~ 500 nm), P. Bhattacharya, M. Zhang, and J. Hinckley, Appl. Phys. Lett., 97, 251107, 2010.
  5. High Performance Tunnel Injection InGaN/GaN Quantum Dot Light Emitting Diodes Emitting in the Green (λ=495 nm), M. Zhang, A. Banerjee, and P. Bhattacharya, J. of Crystal Growth, in press, 2010.
  6. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy, W. Guo, M. Zhang, A. Banerjee and P. Bhattacharya, Nano Letters, 10, 3355, 2010.
  7. InGaN/GaN Self-organized Quantum Dot Green Light Emitting Diodes with Reduced Efficiency Droop, M. Zhang, P. Bhattacharya, and W. Guo, Appl. Phys. Lett., 97, 011103, 2010.
  8. Green Light Emitting Diodes with High Internal Quantum Efficiency InGaN/GaN Self-Organized Quantum Dots Grown by RF-Plasma Assisted Molecular Beam Epitaxy, M. Zhang, W. Guo, A. Banerjee and P. Bhattacharya, Proc. Conference on Lasers and Electro Optics, Paper, CMKK5, 2010.
  9. Mg Doping of GaN Grown by Plasma-Assisted Molecular-Beam Epitaxy in the Nitrogen-rich Region, M. Zhang, P. Bhattacharya, W. Guo, A. Banerjee, Applied Physics Letters, 96, 132103, 2010.
  10. Direct Measurement of Auger Recombination in InGaN/GaN Quantum Wells and Its Impact on the Efficiency of InGaN/GaN Multiple Quantum Well Light Emitting Diodes, M. Zhang, P. Bhattacharya, J. Singh and J. Hinckley, Applied Physics Letters, 95, 201108, 2009.
  11. Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma assisted molecular beam epitaxy, M. Zhang, J. Moore, Z. Mi, and P. Bhattacharya, Journal of Crystal Growth, 311, 2009.
  12. A Biaxially Stretchable Interconnect with Liquid Alloy Joints on flexible substrate, H.-J. Kim, M. Zhang, and B. Ziaie, Proc. IEEE-Transducers Conference, p. 1597, 2007.
  13. Magnetic Properties and Transport Behaviors in Double Doped La0.67+1.33xSr0.33-1.33xMn1-xMgxO3 System. Z. Cai, W. Tong, M. Zhang, B. Zhang, N. Liu, Y. Zhang, Spectroscopy and Spectral Analysis, Vol. 25 No. 4 P. 481-486, 2005.

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