Prof. Christophe J. Muller

University of Provence, France





1996 Ph.D., University Joseph Fourier, France

1991 M.Sc., University of Nice, France

1990 B.Sc., University of Nice, France


Publications (Selected)

  1. Muller Ch., Deleruyelle D., Ginez O. – Emerging Memory Concepts: Materials, Modeling and Design. – In "Design Technology for Heterogeneous Embedded Systems", Edited by G. Nicolescu, I. O’Connor, C. Piguet, Springer, Chapter 15, November 2011 (ISBN: 978-94-007-1124-2).
  2. Bocquet M., Deleruyelle D., Muller Ch., Portal J-M. – Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories. – Applied Physics Letters, vol. 98, no. 26, pp. 263507(1–3), 2011.
  3. Deleruyelle D., Dumas C., Carmona M., Muller Ch., Spiga S., Fanciulli M. – Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy. – Applied Physics Express, vol. 4, no. 5, pp. 051101(1– 3), 2011
  4. Muller Ch., Deleruyelle D., Müller R., Thomas M., Demolliens A., Turquat Ch., Spiga S. – Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer. – Solid-State Electronics, vol. 56, no. 1, pp. 168–174, 2011.
  5. Deleruyelle D., Muller Ch., Amouroux J., Müller R. – Electrical nano-characterisation of copper tetracyanoquinodimethane layers dedicated to resistive random access memories. – Applied Physics Letters, vol. 96, no. 26, pp. 263504(1–3), 2010.
  6. Goux L., Lisoni J.G., Jurczak M., Wouters D.J., Courtade L., Muller Ch. – Coexistence of the bipolar and unipolar resistive switching modes in NiO cells made by thermal oxidation of Ni layers. – Journal of Applied Physics, vol. 107, no. 2, pp. 024512(1–7), 2010.
  7. Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L. – Oxidation kinetics of Ni metallic film: formation of NiO–based resistive switching structures. – Thin Solid Films, vol. 516, no. 12, pp. 4083–4092,2008.