Prof. Aytunç Ateş

Yıldırım Beyazıt University, Turkey



2002 Doctor, Atatürk Üniversitesi, Turkey


  1. Ateş, A. Atsam, M. Kundakcı and M. Yıldırım, Characteristic properties of indium selenide thin films grown by successive ionic layer adsorption and reaction method, JOAM, 11 No:5 (2009), 644-648.
  2. M. Sağlam, A. Ateş, B. Güzeldir, A. Astam and M. A. Yıldırım,Effects of thermal annealingon electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwichstructure, Alloys and Compounds484 (2009) 570–574.
  3. M. Ali YILDIRIM, Aykut ASTAM, Aytunç ATEŞ, Annealing and Light Effect on Structural, Optical and Electrical Properties of CuS, Cu0.6Zn0.4S and ZnS Thin Films Grown by SILAR Method, Physica E, 41, (2009), 1365-1372.
  4. Yasemin CAGLAR, Mujdat CAGLAR, Saliha ILICAN, Aytunc ATES"Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method" Journal of Physics D: Applied Physics, 42, 065421, 2009.
  5. Saliha ILICAN, Yasemin CAGLAR, Mujdat CAGLAR, MutluKUNDAKCI, Aytunc ATES "Photovoltaic solar cell properties of CdxZn1-xO films prepared by sol-gel method" International Journal of Hydrogen Energy, 34, (2009), 5201-5207.
  6. M. Saglam, A. Ates, B. Guzeldir, M.A. Yıldırımand A. Astam,Calculation from current-voltage and capacity-voltage measurements of characteristic parameters of Cd/CdS/n-Si/Au-Sb structure with CdS interface layer grown on n-Si substrate by SILAR method, Microelectronic Engineering, 85 (2008), 1831-1835.
  7. A. Ateş, M. A. Yıldırım, M. Kundakçı and A. Astam Annealing and Light Effect on Optical and Electrical Properties of ZnS Thin Films Grown with SILAR Method Material Science İn Semiconductor Pross. 10 (2008)-281.
  8. Aytunç Ateş, Mutlu Kundakçı, Aykut Astam and Muhammet Yıldırım, Annealing and Light Effect on Optical and Electrical Properties of Evaporated Indium Selenide Thin Films Physica E 40 (2008)-2709.
  9. Kundakçı M., Gurbulak B., Ateş A., Yıldırım M., Dogan S.,Urbach Tail and Electric Field Influence on Optical Properties of InSe and InSe:Er Single Crystals Applied Physics A vol:90 (2008)-479.
  10. M. Kundakçı, A. Ateş., A. Atsam ve M. Yıldırım, Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method Physica E vol:40 (2008)-600.
  11. Gürbulak, M Kundakçı, A. Ateş, and M. Yıldırım, Electric field influence on exciton absorption of Er doped and undoped InSe single crystal Physica Scripta 75 (2007), 424.
  12. A. Ateş, M. Kundakçı, Y. Akaltun, B. Gurbulak, and M. Yıldırım ‘’Effective mass calculation for InSe, InSe: Er crystals’’ Physica E 36, (2007), 217.
  13. Ateş, M. A. Yıldırım, M, Kundakçı and M. Yıldırım, Investigation of Optical and Structral Properties of CdS Thin Films Chinese Jornal of Physics Vol.45 No2-I (2007).
  14. Ateş, M. Yıldırım and B. Gürbulak Absorption measurement and Urbach's Rule in InSe and InSe:Ho0,0025, InSe:Ho0,025single crystals. Optical Materials 28 (2006) 488-493.
  15. Orhan İçelli, Salih Erzeneoğlu, Aytunç Ateş, Gürbulak B.Measurement of mass attenuation coefficients for Ho doped and undoped layered semiconductors InSe in the energy range Journal of quantative spectrocopy&Radiative Transfer 102 (2006) 343.
  16. Gürbulak B.Duman S. and Ateş A.The Urbach tails and optical absorption in layered semiconductor TlGaSe2and TlGaS2single crystals,Czechoslovak Journal of Physics 55 (2005), No:1, 93.
  17. Ateş A., Tüzemen S and Yıldırım M., Modification of exciton binding energy in the Horizontal Bridgman-Stockbarger growth of InSe by Ho doping Journal of Applied Physics Vol.6 No:6, 2004.
  18. Ateş A. Yıldırım M., Gürbulak B. Investigation of the electrical properties of Ho doped InSe single crystal. Physica E, 21, 85-90, 2004.
  19. A. Ateş, Gürbulak B. Yıldırım M. and Tüzemen S., Absorption measurements in InSe:Ho single crystal under an electric field. Czechoslavak Journal of Physics, 54/3, 377-385, 2004.
  20. Ateş, Effective mass calculation for InSe, InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05 samples using the external electric field shifting. Indian Journal of Pure and Applied Physics, 42/3 205-210, 2004.
  21. Gürbulak B.Duman S. and Ateş A. The Growth of p-Type TlGaSe2(1-x)S2xSigle Crystals,Czechoslovak Journal of Physics, 54, 8, 857-866, 2004.
  22. Ateş A. Gürbulak B. Yıldırım M. and Doğan S. Electric field influence on absorption measurements in InSe single crystal. Physica E, 16/2, 274-279, 2003.
  23. Tüzemen S., Doğan S., Ateş A., Xiong G., Wilkonson J. and Williams R.T., Convertibility of conductivity type in reactively sputtered ZnO thin film. Phy. Stat. Sol. (a) 195, (1), 165-170, 2003.
  24. Yıldırım M. Tüzemen, Gürbulak B., Ateş A. and Ayyıldız E, Persistent Galvanomagnetic Effect Related to Photo-Qenching phenomena in Lightly n-Type Lec GaAs, Physica Scripta, Vol. 63,169-172,2001.
  25. Gürbulak B. Yıldırım M. Ateş A. Doğan S. Coşkun C. and Yoğurtçu Y.K. Temperature Dependence of magnetoresistance and Hall Effect for Ho Doped n-type InSe. Physica Scripta 62, 92-96 2000.
  26. Doğan S., Tüzemen S., Gürbulak B., Ateş A. and Yıldırım M., In situ Optical Assessment of Semi-Insulating Iron Doped InP Grown Liquid Encapsulated Czochralski Process, J. Applied Physics, 85, 9, 6777, 1999.
  27. Gürbulak B. Yıldırım M. Ateş A. Doğan S. and Yoğurtçu Y.K. Growth and Temperature Dependence of Optical Properties of Er Doped and Undoped n-Type InSe. Jpn. Journal Applied Physics Vol 38 No.9A Pt. 1, 5133, 1999.

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