WJCMP  Vol.8 No.4 , November 2018
Ac Recombination Velocity in a Lamella Silicon Solar Cell
ABSTRACT
The silicon solar cell with series-connected vertical junction is studied with different lamella widths—the expression of the ac recombination velocity of the excess minority carrier at the back surface is established. Spectroscopy technique reveals dominated impact of the lamella widths of the base.
Cite this paper
Gueye, M. , Diallo, H. , Moustapha, A. , Traore, Y. , Diatta, I. and Sissoko, G. (2018) Ac Recombination Velocity in a Lamella Silicon Solar Cell. World Journal of Condensed Matter Physics, 8, 185-196. doi: 10.4236/wjcmp.2018.84013.
References
[1]   (1995) Silicon Solar Cells, Advanced Principles and Practice. Centre for Photovoltaic Devices and Systems, 258-265.

[2]   Liou, J.J. and Wong, W.W. (1992) Comparison and Optimization of the Performance of Si and GaAs Solar Cells. Solar Energy Materials and Solar Cells, 28, 9-28.
https://doi.org/10.1016/0927-0248(92)90104-W

[3]   Shockley, W. (1950) Electrons and Holes in Semiconductors. Van Nostrand, New York, 558.

[4]   Jung, T.-W., Lindholm, F.A. and Neugroschel, A. (1984) Unifying View of Transient Responses for Determining Lifetime and Surface Recombination Velocity in Silicon Diodes and Back-Surface-Field Solar Cells, with Application to Experimental Short-Circuit-Current Decay. IEEE Transactions on Electron Devices, 31, 588-595.
https://doi.org/10.1109/T-ED.1984.21573

[5]   Jain, S.C. (1983) The Effective Lifetime in Semicrystalline Silicon. Solar Cells, 9, 345-352.
https://doi.org/10.1016/0379-6787(83)90028-5

[6]   Sissoko, G., Nanéma, E., Corréa, A., Biteye, P.M., Adj, M. and Ndiaye, A.L. (1998) Silicon Solar Cell Recombination Parameters Determination Using the Illuminated I-V Characteristic. Renewable Energy, 3, 1848-1851.

[7]   Zondervan, A., Verhoef, L.A. and Lindholm, F.A. (1988) Measurement Circuits for Silicon-Diode and Solar Cells Lifetime and Surface Recombination Velocity by Electrical Short-Circuit Current Delay. IEEE Transactions on Electron Devices, 35, 85-88.
https://doi.org/10.1109/16.2419

[8]   Von Roos, O. (1981) Analysis of the Photo Voltage Decay (PVD) Method for Measuring Minority Carrier Lifetimes in P-N Junction Solar Cells. Journal of Applied Physics, 52, 5833-5837.
https://doi.org/10.1063/1.329478

[9]   Lindholm, F.A., Liou, J.J., Neugroschel, A. and Jung, T.W. (1987) Determination of Lifetime and Surface Recombination Velocity of p-n Junction Solar Cells and Diodes by Observing Transients. IEEE Transactions on Electron Devices, 34, 277-283.

[10]   Kumar, S., Singh, P.K. and Chilana, G.S. (2009) Study of Silicon Solar Cell at Different Intensities of Illumination and Wavelengths Using Impedance Spectroscopy. Solar Energy Materials and Solar Cells, 93, 1881-1884.
https://doi.org/10.1016/j.solmat.2009.07.002

[11]   Kumar, S., Singh, P.K. and Dhariwal, S.R. (2010) Effect of Surface Passivation on Generation and Recombination Lifetimes in Silicon Wafer Studied by Impedance Spectroscopy. Applied Physics Letters, 3, 162109.

[12]   Mandelis, A. (1989) Coupled ac Photocurrent and Photothermal Reflectance Response Theory of Semiconducting p-n Junctions. I. Journal of Applied Physics, 66, 5572-5583.
https://doi.org/10.1063/1.343662

[13]   Dhariwal, S.R. and Vasu, N.K. (1981) A Generalized Approach to Lifetime Measurement in p-n Junction Solar Cells. Solid-State Electronics, 24, 915-927.
https://doi.org/10.1016/0038-1101(81)90112-X

[14]   De, S.S., Ghosh, A.K., Bera, M., Hajra, A. and Haldar, J.C. (1996) Influence of Built-In Potential on the Effective Surface Recombination Velocity for a Heavily Doped High-Low Junction. Physica B, 228, 363-368.
https://doi.org/10.1016/S0921-4526(96)00474-7

[15]   Arora, J.D, Singh, S.N. and Mathur, P.C. (1981) Surface Recombination Effects on the Performance of n+-p Step and Diffused Junction Silicon Solar Cells. Solid State Electronics, 24, 739-747.
https://doi.org/10.1016/0038-1101(81)90055-1

[16]   Xing, Y., Han, P., Wang, S., Liang P., Lou, S., Zhang, Y., Hu, S., Zhu, H., Mi, Y. and Zhao, C. (2013) Analysis of Effects of Front and Back Surface of One Vertical Silicon Dopants Multi-Junction Solar Cell by 2D Numerical Simulation. Science China Technological Sciences, 56, 2798-2807.

[17]   Diao, A., Wade, M., Thiame, M. and Sissoko, G. (2017) Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects. Journal of Modern Physics, 8, 2200-2208.
https://doi.org/10.4236/jmp.2017.814135

[18]   Barro, F.I., Nanéma, E., Werème, A., Zougmoré, F. and Sissoko, G. (2001) Bulk and Surface Recombination Measurement in Silicon Double Sided Surface Field Solar Cell under Constant White Bias Illumination. Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, 22-26 October 2001, 368-371.

[19]   Diasse, O., Diao, A., Wade, M., Diouf, M.S., Diatta, I., Mane, R., Traore, Y. and Sissoko, G. (2018) Back Surface Recombination Velocity Modeling in White Bias Silicon Solar Cell under Steady State. World Journal of Condensed Matter Physics, 9, 189-201.

[20]   Sissoko, G., Sivoththanam, S., Rodot, M. and Mialhe, P. (1992) Constant Illumination-Induced Open Circuit Voltage Decay (CIOCVD) Method, as Appliedto High Efficiency Si Solar Cells for Bulk and Back Surface Characterization. 11th European Photovoltaic Solar Energy Conference and Exhibition, Monteux, 12-16 October 1992, 352-354.

[21]   Donolato, C. (1999) Effective Diffusion Length of Multicrystalline Solar Cells. Solid State Phenomena, 67-68, 75-80.

[22]   Dugas, J. (1994) 3D Modelling of Reverse Cell Made with Improved Multicrisalline Silicon Wafers. Solar Energy Materials and Solar Cells, 32, 71-88.

[23]   Oualid, J., Bonfils, M., Crest, J.P., Mathian, G., Amzil, H., Dugas, J., Zehaf, M. and Martinuzzi, S. (1982) Photocurrent and Diffusion Lengths at the Vicinity of Grain Boundaries (g.b.) in N and P-Type Polysilicon. Evaluation of the g.b. Recombination Velocity. Revue de Physique Appliquée, 17, 119-124.
https://doi.org/10.1051/rphysap:01982001703011900

[24]   Ray, U.C. and Agarwal, S.K. (1988) Wavelength Dependence of Short-Circuit Current Decay in Solar Cells. Journal of Applied Physics, 63, 547-549.
https://doi.org/10.1063/1.340084

[25]   Barro, F.I., Seidou Maiga, A., Wereme, A. and Sissoko, G. (2010) Determination of Recombination Parameters in the Base of a Bifacial Silicon Solar Cell under Constant Multispectral Light. Physical and Chemical News, 56, 76-84.

[26]   Dione, M.M., Mbodji, S., Samb, M.L., Dieng, M., Thiame, M., Ndoye, S., Barro, F.I. and Sissoko, G. (2009) Vertical Junction under Constant Multispectral Light: Determination of Recombination Parameters. Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, 21-25 September 2009, 465-469.
http://www.eupvsec-proceedings.com

[27]   Diatta, I., Ly, I., Wade, M., Diouf, M.S., Mbodji, S. and Sissoko, G. (2016) Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light World. Journal of Condensed Matter Physics, 6, 261-268.
http://www.scirp.org/journal/wjcmp

[28]   Ayvazian, G.E., Kirakosyan, G.H. and Minasyan, G.A. (2004) Characteristics of Solar Cells with Vertical p-n Junction. Proceedings of 19th European Photovoltaic Solar Energy Conference, Paris, 7-11 June 2004, 117-119.

[29]   Zoungrana, M., Dieng, B., Lemrabott, O.H., Toure, F., Ould El Moujtaba, M.A., Sow, M.L. and Sissoko, G. (2012) External Electric Field Influence on Charge Carrier and Electrical Parameters of Polycrystalline Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2967-2972.

[30]   Ba, F., Seibou, B., Wade, M., Diouf, M.S., Ly, B. and Sissoko, G. (2016) Equivalent Electric Model of the Junction Recombination Velocity Limiting the Open Circuit of a Vertical Parallel Junction Solar Cell under Frequency Modulation. International Journal of Electronics & Communication, 4, 1-11.

[31]   Ngom, M.I., Zouma, B., Zoungrana, M., Thiame, M., Bako, Z.N., Camara, A.G. and Sissoko, G. (2012) Theoretical Study of a Parallel Vertical Multi-Junction Silicon Cell under Multispectral Illumination: Influence of External Magnetic Field on the Electrical Parameters. International Journal of Advanced Technology & Engineering Research, 2, 101-109.

[32]   Mbodji, S., Zoungrana, M., Zerbo, I., Dieng, B. and Sissoko, G. (2015) Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay. World Journal of Condensed Matter Physics, 5, 284-293.
https://doi.org/10.4236/wjcmp.2015.54029

[33]   Diallo, M.M., Tamba, S., Seibou, B., Cheikh, M.L.O., Diatta, I., Ndiaye, E.H., Traore, Y., Sarr, C.T. and Sissoko, G. (2017) Impact of Irradiation on the Surface Recombination Velocity of a Back Side Monochromatic Illuminated Bifacial Silicon Solar Cell under Frequency Modulation. Journal of Scientific and Engineering Research, 4, 29-40.

[34]   Hu, C., Carney, J.K. and Frank, R.I. (1977) New Analysis of a High Voltage Vertical Multijunction Solar Cell. Journal of Applied Physics, 48, 442-444.
https://doi.org/10.1063/1.323355

[35]   Sarfaty, R., Cherkun, A., Pozner, R., Segev, G., Zeierman, E., Flitsanov, Y., Kribus, A. and Rosenwaks, Y. (2011) Vertical Junction Si Micro-Cells for Concentrating Photovoltaics. Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 5-6 September 2011, 145-147.

[36]   Wise, J.F. (1970) Wertical Junction Hardened Solar Cell. US Patent 3, 690-953.

[37]   Gover, A. and Stella, P. (1974) Vertical Multijunction Solar-Cell One-Dimensional Analysis. IEEE Transactions on Electron Devices, ED-21, 351-356.

[38]   Diallo, H.L., Dieng, B., Ly, I., Dione, M.M., Ndiaye, M., Lemrabott, O.H., Bako, Z.N., Wereme, A. and Sissoko, G. (2012) Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2626-2631.

[39]   Terheiden, B., Hahn, G., Fath, P. and Bucher, E. (2000) The Lamella Silicon Solar Cell. Proc. 16th European Photovoltaic Solar Energy Conference, Glasgow, 1-5 May 2000, 1377-1380.

[40]   Ngom, M.I., Thiam, A., Sahin, G., El Moujtaba, M.A.O., Faye, K., Diouf, M.S. and Sissoko, G. (2015) Influence of Magnetic Field on the Capacitance of a Vertical Junction Parallel Solar Cell in Static Regime, under Multispectral Illumination. International Journal of Pure & Applied Sciences & Technology, 31, 65-75.

[41]   Kunst, M. and Sanders, A. (1992) Transport of Excess Carriers in Silicon Wafers. Semiconductor Science and Technology, 7, 51-59.
https://doi.org/10.1088/0268-1242/7/1/009

[42]   Meier, D.L., Hwang, J.-M. and Campbell, R.B. (1988) The Effect of Doping Density and Injection Level on Minority-Carrier Lifetime as Applied to Bifacial Dendritic Web Silicon Solar Cells. IEEE Transactions on Electron Devices, ED-35, 70-79.
https://doi.org/10.1109/16.2417

[43]   Furlan, J. and Amon, S. (1985) Approximation of the Carrier Generation Rate in Illuminated Silicon. Solid-State Electronics, 28, 1241-1243.
https://doi.org/10.1016/0038-1101(85)90048-6

[44]   Diao, A., Thiam, N., Zoungrana, M., Sahin, G., Ndiaye, M. and Sissoko, G. (2014) Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92.
https://doi.org/10.4236/wjcmp.2014.42013

[45]   Diallo, H.L., Wereme, A., Maiga, A.S. and Sissoko, G. (2008) New Approach of Both Junction and Back Surface Recombination Velocities in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. The European Physical Journal Applied Physics, 42, 203-211.
https://doi.org/10.1051/epjap:2008085

[46]   Sissoko, G., Museruka, C., Corréa, A., Gaye, I. and Ndiaye, A.L. (1996) Light Spectral Effect on Recombination Parameters of Silicon Solar Cell. World Renewable Energy Congress, Pergamon, Part III, 1487-1490.

[47]   Thiam, N., Diao, A., Ndiaye, M., Dieng, A., Thiam, A., Sarr, M., Maiga, A.S. and Sissoko, G. (2012) Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect. Research Journal of Applied Sciences, Engineering and Technology, 4, 4646-4655.

[48]   Joardar, K., Dondero, R.C. and Schroder, D.K. (1989) A Critical Analysis of the Small-Signal Voltage-Decay Technique for Minority-Carrier Lifetime Measurement in Solar Cells. Solid-State Electronics, 32, 479-483.

[49]   Ndiaye, E.H., Sahin, G., Thiam, A., Dieng, M., Diallo, H.L., Ndiaye, M. and Sissoko, G. (2015) Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation. Journal of Applied Mathematics and Physics, 3, 1522-1535.

[50]   Fossum, J.G. (1977) Physical Operation of Back-Surface-Field Silicon Solar Cells. IEEE Transactions on Electron Devices, 2, 322-325.
https://doi.org/10.1109/T-ED.1977.18735

[51]   Maxwell, J.C. (1982) Electricity and Magnetism. Calerdon, Oxford, 1.

[52]   Yadav, P., Pandey, K., Tripathi, B., Kumar, C.M., Srivastava, S.K., Singh, P.K. and Kumar, M. (2015) An Effective Way to Analyze the Performance Limiting Parameters of a Poly-Crystalline Silicon Solar Cell Fabricated in the Production Line. Solar Energy, 122, 1-10.
https://doi.org/10.1016/j.solener.2015.08.005

[53]   Selma, M.S.H., Traore, Y., Diatta, I., Diouf, M.S., Wade, M., Habiboulahh, L.O. and Sissoko, G. (2018) Diffusion Capacitance in a Silicon Solar Cell under Frequency Modulated Illumination: Magnetic Field and Temperature Effects. Journal of Scientific and Engineering Research, 5, 317-324.

[54]   Mora-Sero, I., Garcia-Belmonte, G., Boix, P.P., Vazquez, M.A. and Bisquert, J. (2009) Impedance Spectroscopy Characterization of Highly Efficient Silicon Solar Cells under Different Illumination Intensities Light. Energy and Environmental Science, 2, 678-686.
https://doi.org/10.1039/b812468j

[55]   Garland, J.E., Crain, D.J., Zheng, J.P., Sulyma, C.M. and Roy, D. (2011) Electro-Analytical Characterization of Photovoltaic Cells by Combining Voltammetry and Impedance Spectroscopy: Voltage Dependent Parameters of a Silicon Solar Cell under Controlled Llumination and Temperature. Energy & Environmental Science, 4, 485-498.
https://doi.org/10.1039/C0EE00307G

 
 
Top