JAMP  Vol.3 No.11 , November 2015
Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation
ABSTRACT
In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.
Cite this paper
Ndiaye, E. , Sahin, G. , Dieng, M. , Thiam, A. , Diallo, H. , Ndiaye, M. and Sissoko, G. (2015) Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation. Journal of Applied Mathematics and Physics, 3, 1522-1535. doi: 10.4236/jamp.2015.311177.
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