JSEMAT  Vol.4 No.2 , April 2014
Structural Characteristics of Porous Silicon
ABSTRACT


Silicon wafers (p-type) were etched under continuous flow of HF vapors in a reaction chamber at standard temperature and pressure. Etched surface of the silicon wafer was found emitting red luminescence when exposed to ultra violet (UV) light. XRD and Atomic Force Microscopy of the etched samples were carried out to study the surface of the etched silicon. It is noticed that etching has removed the stress induced atomic layers of silicon at grain boundaries and layer of porous silicon has been formed at the surface of silicon wafer which has higher inter planer distance than the silicon itself. The size of dots observed on the surface of etched silicon is of the order of few nm. The red emission from the surface of etched silicon appears to be due to the energy states induced by quantum confinement.



Cite this paper
Hussain, Q. ,  , A. , Naz, N. , Akbar, A. and Ali, A. (2014) Structural Characteristics of Porous Silicon. Journal of Surface Engineered Materials and Advanced Technology, 4, 105-110. doi: 10.4236/jsemat.2014.42014.
References
[1]   Kalem, S. and Yavuzcetin, O. (2000) Possibility of Fabricating Light-Emitting Porous Silicon from Gas Phase Etchants. Optics Express, 6, 7-11. http://dx.doi.org/10.1364/OE.6.000007

[2]   Vinod, M.P. and Vijayamohanan, K. (1996) Silicon Based Light Emitting Gels. Applied Physics Letters, 68, 81.
http://dx.doi.org/10.1063/1.116765

[3]   Aouida, S., Saadoum, M., Saad, K.B. and Bessaïs, B. (2006) Phase Transition and Luminescence Properties from Vapor Etched Silicon. Thin Solid Films, 495, 357-360.
http://dx.doi.org/10.1016/j.tsf.2005.08.235

[4]   Canham, L.T. (1990) Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers. Applied Physics Letters, 57, 1046. http://dx.doi.org/10.1063/1.103561

[5]   Kumar, P., Lemmens, P., Ghosh, M., Ludwi, F. and Schilling, M. (2009) Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon. Journal of Nanomaterials, 18, Article ID: 727957, 7.

[6]   Kabbi, H., Miliki, N., Cheynet, M., Saikalay, W., Gibbert, D., Bassïs, B., Yangui, B. and Charï, A. (2006) Structural and Optical Properties of Vapour-Etching Based Porous Silicon. Crystal Research and Technology, 41, 154-162.
http://dx.doi.org/10.1002/crat.200510548

[7]   Sudesh, T.L., Wijesinghe, L., Li, S.Q., Breese, M.B.H. and Blackwood, D.J. (2009) High Resolution TEM and Triple-Axis XRD Investigation into Porous Silicon Formed on Highly Conducting Substrates. Electrochemica Acta, 54, 3671-3676.

[8]   Rachwal, J.D. (2010) Thesis on X-Ray Diffraction Applications in Thin Films and (100) Silicon Substrate Stress Analysis. University of South Florida, Tampa.

[9]   Dulov, E.N. and Khripunov, D.M. (2007) Voigt Lineshape Function as a Solution of the Parabolic Partial Differential Equation. Journal of Quantitative Spectroscopy and Radiative Transfer, 107, 428 p.

[10]   Parrish, W. and Langford, J.I. (2004) International Tables for Crystallography Volume C: Mathematical, Physical and Chemical Tables. International Tables for Crystallography, 200, 42 p.

[11]   Aouida, S., Saadoum, M., Saad, B.K. and Bessaïs, B. (2006) Phase Transition and Luminescence Properties from Vapor Etched Silicon. Thin Solid Films, 495, 357.
http://dx.doi.org/10.1016/j.tsf.2005.08.235

[12]   Lauerhaas, J.M. and Sailor, M.J. (1993) Chemical Modification of the Photoluminescence Quenching of Porous Silicon. Science, 261, 1567-1568. http://dx.doi.org/10.1126/science.261.5128.1567

[13]   Boonekamp, E.P., Kelly, J.J. and Sandag, A. (1994) The Chemical Oxidation of Hydrogen-Terminated Silicon (111) Surfaces in Water Studied in Situ with Fourier Transform Infrared Spectroscopy. Journal of Applied Physics, 75, 8121.
http://dx.doi.org/10.1063/1.356510

[14]   Mehta, B.R., Sahay, M.K., Malhotra, L.K., Avasthi, D.K. and Soni, R.K. (1996) High Energy Heavy Ion Induced Changes in the Photoluminescence and Chemical Composition of Porous Silicon. Thin Solid Films, 289, 95-98.
http://dx.doi.org/10.1016/S0040-6090(96)08937-7

[15]   Gole, J.L. and Dixon, D.A. (1998) Potential Role of Silanones in the Photoluminescence-Excitation, Visible Photoluminescence-Emission, and Infrared Spectra of Porous Silicon. Physical Review B, 57, 12002.
http://dx.doi.org/10.1103/PhysRevB.57.12002

 
 
Top