JST  Vol.2 No.3 , September 2012
Modelling of Thermal Behavior N-Doped Silicon Resistor
From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.
Cite this paper
F. Kerrour, A. Boukabache and P. Pons, "Modelling of Thermal Behavior N-Doped Silicon Resistor," Journal of Sensor Technology, Vol. 2 No. 3, 2012, pp. 132-137. doi: 10.4236/jst.2012.23019.
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